Dear BSIM Users,
 
Thank you for your support of the BSIM models. We are releasing BSIM4.6.1 version  today (May 18, 2007). 
 
Compared with BSIM4.6.0, several new features are added in this version.
 
1) New material model is introduced for the predictve modeling of Non-SiO2 insulator, Non-Poly Silicon gate 
   and Non-silicon channel.
 - The following new parameters are added
   MTRLMOD : New material model selector
   PHIG, EPSRGATE : non-poly silicon gate parameters
   EOT, VDDEOT : non-SiO2 gate dielectric
   EASUB, EPSRSUB, NI0SUB, BG0SUB, TBGASUB, TBGBSUB, ADOS, BDOS : Non-silicon channel parameters

2) Mobility model (MOBMOD = 0 and MOBMOD = 1) has been improved through predictive modeling of vertical electric field. 
   The improved mobility model is selected through MTRLMOD = 1 for backward compatibility.

3) GIDL/GISL models are improved through an improved definition of flatband voltages at S/D ends.
   The improved GISL/GIDL model is selected through MTRLMOD = 1 for backward compatibility.  

4) Poly-depletion model is modified to account for new gate and gate-insulator materials.

5) C-V model has been improved by adding a new VgsteffCV definition through CVCHARGEMOD = 1
 - 6 new parameters have been added
	CVCHARGEMOD, MINVCV, LMINVCV, WMINCV, PMINVCV and VOFFCVL

6) Bug fix : Following the report by Geoffery Coram (ADI),an error in the derivative calculation of dVdseffCV_dVb has been 
   fixed for CAPMOD = 1 and CAPMOD = 2 in b4ld.c

7) The warning limits for NOFF and VOFFCV have been removed from b4check.c.


The complete list of enhancements, bugs and fixes and the users who reported them, the 
BSIM4.6.1 source code, BSIM4.6.1 user manual, BSIM4.6.1 document and testing examples can  
be downloaded at:  http://www-device.eecs.berkeley.edu/~bsim3/bsim4_get.html
 
We would like to express our sincere thanks to all the users who gave us suggestions.  
We thank you for your support for BSIM and welcome your feedback on this latest release
of BSIM4.
 
Sincerely,
 
BSIM Team
UC Berkeley