All input data for WRspice is assumed to have been measured at a nominal temperature of 27C, which can be changed by use of the tnom parameter on the .options control line. This value can further be overridden for any device which models temperature effects by specifying the tnom parameter on the model itself. The circuit simulation is performed at a temperature of 27C unless overridden by a temp parameter on the .options control line. Individual device instances may further override the circuit temperature through the specification of a temp parameter on the instance.
Temperature dependent support is provided for resistors and semiconductor devices. The details of the temperature adjustments can be found in the description of the models. For details of the BSIM temperature adjustment, see [5] (BSIM1), [6] (BSIM2), and [8] (BSIM3).
Temperature appears explicitly in the exponential terms of the BJT and diode model equations. In addition, saturation currents have a built-in temperature dependence. The temperature dependence of the saturation current in the BJT models is determined by:
The temperature dependence of forward and reverse beta is according to the formula:
Temperature dependence of the saturation current in the junction diode model is determined by:
Temperature appears explicitly in the value of junction potential,
(in WRspice, phi), for all device models. The
temperature dependence is determined by:
Temperature appears explicitly in the value of surface mobility,
(or u0, for the MOSFET models. This temperature
dependence is determined by:
The effects of temperature on resistors is modeled by the formula: