Diode Model

**Type Name:** `d`

The dc characteristics of the diode are determined by the parameters
`is` and `n`. An ohmic resistance, `rs`, is included.
Charge storage effects are modeled by a transit time, `tt`, and a
nonlinear depletion layer capacitance which is determined by the
parameters `cjo`, `vj`, and `m`. The temperature
dependence of the saturation current is defined by the parameters `eg`, the energy, and `xti`, the saturation current temperature
exponent. The nominal temperature at which these parameters were
measured is `tnom`, which defaults to the value
specified on the `.options` control line. Reverse breakdown is
modeled by an exponential increase in the reverse diode current and is
determined by the parameters `bv` and `ibv` (both of which are
positive numbers).

The diode model is an enhanced version of the SPICE3 diode model, as used in NGspice, but with additional support for HSPICE model parameters.

The parameters marked with an asterisk in the **area** column scale
with the `area` and/or the `m` (multiplicity) parameters given
in the device line. The parameters marked with two asterisks scale
with the `pj` (perimeter factor) parameter given in the device
line.

Diode Model Parametersnameareaparameterunitsdefaultexampleis, js* saturation current A1.0e-14 1.0e-14 jsw** sidewall saturation current A0 rs* ohmic resistance 0 10 trs, trs1ohmic resistance 1st order temp coeff - 0 trs2ohmic resistance 2nd order temp coeff - 0 nemission coefficient - 1 1.0 tttransit-time S0 0.1ns tt1transit-time 1st order temp coeff - 0 tt2transit-time 2nd order temp coeff - 0 cjo, cj0, cj* zero-bias junction capacitance F0 2PF vj, pbjunction potential V1 0.6 m, mjgrading coefficient - 0.5 0.5 tm1grading coefficient 1st temp coeff - 0 tm2grading coefficient 1nd temp coeff - 0 cjp, cjsw** sidewall junction capacitance F0 phpsidewall junction potential V0 mjswsidewall grading coefficient - 0.33 ikf, ik* forward knee current A1e-3 ikrreverse knee current A1e-3 egactivation energy eV1.11 1.11 Si,

0.69 Sbd,

0.67 Gextisaturation-current temperature exponent - 3.0 3.0 junc,

2.0 Sbdkfflicker noise coefficient - 0 - afflicker noise exponent - 1 - fcforward-bias junction fit parameter - 0.5 fcsforward-bias sidewall junction fit parameter - 0.5 bvreverse breakdown voltage Vinfinite 40.0 ibvcurrent at breakdown voltage A1.0e-3 2.0e-3 tnom, trefparameter measurement temperature C25 50 HSPICE Compatibilityleveldevice type selector tlevequation set selector tlevcequation set selector areaarea default pjsidewall perimeter factor default ctajunction capacitance temp. coeff. ctpsidewall capacitance temp. coeff. tcvbreakdown voltage temp. coeff. tcvjunction potential temp. coeff. tcvsidewall potential temp. coeff.

The HSPICE compatibility parameters provide some minimal compatibility
with the HSPICE diode model. The `level` parameter, if present,
can take values of 1 and 3, corresponding to the HSPICE junction and
geometric junction models. There is presently no support for the `level=2` Fowler-Nordheim model. The `tlev` and `tlevc`
parameters switch equation sets. Both take values of 0 and 1, and if
set to any other value will assume a value of 1, i.e., higher values
are not supported. The remaining parameters are as defined in the
HSPICE documentation.